After the system's product feasibility, product design and product series verification, Chengguangxing thermoset EMC package 3838 products were officially launched. The product has the following characteristics: 1. Infrared light source, high emission power 2, peak wavelength: 850~940nm3, illumination angle: 90°, pad design compatible with OSRAM4713/4715...
On a hot summer day, the sun bakes the ground hot and hot, the twigs of the weeping willows on the road are motionless, the shadows of the trees are shrunk, and the leaves covered with dust are smashing. In the afternoon, people are always particularly tired and tired, just like waking up, groggy and not wanting to move. Cheng Guangxing these most lovely people, fighting...
In September 2015, the Baoguan Science and Technology Park basketball court was officially opened. Cheng Guangxing Business Department sincerely invited partners closer to the company: Joan Technology and Runzhihui, which held two basketball friendly matches on September 10 and September 19 respectively. As a host, the Cheng Guangxing basketball team played an imposing manner and played a style. but...
On August 21st, 2015, in order to make Chengguangxing's business team and management team more united, stronger and more competitive, and able to better adapt to the infinitely changing market environment, the company's General Manager Office initiated by the Ministry of Administration. Organized the expansion training activities of “Beyond Self, Win in the Team!”, through a tense and orderly extension...
The photodiode is actually a photoresistor that is very sensitive to light changes. The die of the photodiode is a PN junction with photosensitive properties and has unidirectional conductivity, so the intensity of the light can be used to change the current in the circuit. A photodiode is a semiconductor device that converts an optical signal into an electrical signal. Its core part is also a PN junction. The structure is different from that of a normal diode. In order to facilitate the reception of incident light, the PN junction area is as large as possible, the electrode area is as small as possible, and the junction depth of the PN junction is very shallow, generally less than 1 micron. tube
There are many types of infrared receiving heads, and the pin definitions are different. Typically, there are three pins (power pin, ground and signal output pins). The receiving head of the corresponding mediation frequency should be selected according to the difference of the modulated carrier at the transmitting end. Below, Chengguangxing photoelectric infrared receiver manufacturers to explain the following considerations for using infrared receivers:
First, it should be kept clean and in good condition, especially the spherical emitting part of the front end can neither contain dirt and other dirt, nor will it be damaged by friction. Otherwise, the infrared light emitted from the die will cause reflection and scattering, which will directly affect the transmission of infrared light.
What are the classifications of infrared light-emitting diodes? Below, Cheng Guangxing infrared emission tube manufacturers to introduce to you: 1. In-line low-power infrared light-emitting diodes, specifications include: straw hat/helmet, round head, concave, ellipse, tombstone type (2*3*4) bullet, flat head, (3/5/flat head/bread type) Piranha and so on. Second, SMD SMD type infrared light-emitting diodes, conventional models are generally divided into: (3020/3528/5050/5630 these are front-illuminated) / 1016/1024, etc. These are side-illuminated light sources.
Infrared emitters are used in many industries and are commonly used in communications and sensors. What methods can increase the control distance of the infrared emission tube? Below, Cheng Guangxing infrared emission tube manufacturers to explain the method of increasing the control distance of the infrared emission tube:
The infrared emission tube is composed of an infrared light emitting diode, and the PN junction is made of a material with high infrared radiation efficiency (usually using gallium arsenide), and a forward bias is injected into the PN junction to inject a current to excite infrared light, and the spectral power distribution is a central wavelength of 830~ 950nm. The performance of a light emitting diode is a positive temperature coefficient. The higher the current, the higher the temperature, and the higher the temperature, the higher the current. The power of an LED infrared diode is related to the magnitude of the current. However, when the forward current exceeds the maximum value, the infrared diode emission power is lowered. The infrared emission tube does not directly contact the object to be measured during the measurement process, so there is no friction, and the advantage is high sensitivity and fast response.
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